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HiPerFASTTM IGBT IXGH39N60B IXGH39N60BD1 IXGT39N60B IXGT39N60BD1 VCES IC25 VCE(sat) tfi = = = = 600 V 76 A 1.7 V 200 ns Preliminary data (D1) Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 M Continuous Transient TC = 25C TC = 90C TC = 25C, 1 ms VGE = 15 V, TVJ = 125C, RG = 22 Clamped inductive load TC = 25C Maximum Ratings 600 600 20 30 76 39 152 ICM = 76 @ 0.8 VCES 200 -55 ... +150 150 -55 ... +150 300 V V V V A A A A W C C C C TO-268 (IXGT) G E C (TAB) TO-247 AD (IXGH) G C (TAB) C E G = Gate, E = Emitter, C = Collector, TAB = Collector Features International standard packages JEDEC TO-247 AD & TO-268 High current handling capability Newest generation HDMOSTM process MOS Gate turn-on - drive simplicity Applications Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Weight Mounting torque (M3) TO-247 1.13/10Nm/lb.in. TO-247 AD TO-268 6 4 g g Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) Min. Typ. Max. 39N60B 39N60BD1 39N60B 39N60BD1 39N60B 39N60B 39N60BD1 600 600 2.5 2.5 5.0 5.0 200 1 3 100 1.7 V V V A mA mA nA V BVCES VGE(th) ICES IC IC IC IC = 250 A, VGE = 0 V = 750 A = 250 A, VCE = VGE = 500 A PFC circuits AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies Advantages High power density Very fast switching speeds for high frequency applications VCE = 0.8 * VCES TJ = 25C VGE = 0 V TJ = 125C TJ = 125C IGES VCE(sat) VCE = 0 V, VGE = 20 V IC = I90, VGE = 15 V (c) 2003 IXYS All rights reserved DS97548A(02/03) IXGH39N60B IXGT39N60B IXGH39N60BD1 IXGT39N60BD1 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 19 28 2750 VCE = 25 V, VGE = 0 V, f = 1 MHz 39N60B 39N60BD1 200 240 50 110 IC = IC90, VGE = 15 V, VCE = 0.5 VCES Inductive load, TJ = 25C IC = IC90, VGE = 15 V VCE = 0.8 VCES, RG = Roff = 4.7 Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG Inductive load, TJ = 125C IC = IC90, VGE = 15 V VCE = 0.8 VCES, RG = Roff = 4.7 Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG 25 40 25 30 250 200 4.0 25 30 0.3 360 350 6.0 500 360 150 35 75 S P TO-247 AD Outline gfs Cies Coes Cres QG QGE QGC td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK IC = IC90; VCE = 10 V, Pulse test, t 300 s, duty cycle 2 % pF pF pF pF nC nC nC ns ns ns ns Dim. e 6.0 mJ ns ns mJ ns ns mJ 0.62 K/W Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC 0.25 K/W Reverse Diode (FRED) Symbol VF IRM t rr RthJC Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. TJ =150C TJ = 25C typ. max. 1.6 2.5 V V A ns ns 0.9 K/W IF = IC90, VGE = 0 V, Pulse test t 300 s, duty cycle d 2 % IF = IC90, VGE = 0 V, -diF/dt = 100 A/s 6 VR = 100 V TJ = 100C 100 IF = 1 A; -di/dt = 100 A/s; VR = 30 V TJ = 25C 25 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1 IXGH39N60B IXGT39N60B IXGH39N60BD1 IXGT39N60BD1 Fig. 1. Saturation Voltage Characteristics @ 25 Deg. C 40 35 30 IC - Amperes 25 20 15 10 5 0 0.4 0.8 1.2 1.6 VCE - Volts 2 2.4 5V V GE=15V 13V 11V 9V Fig. 2. Extended Output Characteristics @ 25 Deg. C 160 140 120 IC - Amperes V GE=15V 13V 11V 7V 100 80 60 40 20 0 0 1 2 3 9V 7V 5V 4 5 V CE - Volts Fig. 3. Saturation Voltage Characteristics @ 125 Deg. C 100 80 IC - Amperes 60 40 20 5V V GE=15V 13V 11V 9V V CE(SAT) - Normalized Fig. 4. Temperature Dependence of VCE(SAT) 1.45 1.3 1.15 1 0.85 IC=19.5A IC =39A IC=78A 7V 0 0.7 0 1 2 3 4 5 -50 -25 0 25 50 75 100 125 150 V CE - Volts TJ - Degrees Centigrade Fig. 5. BVCES & V (GE)TH vs. Junction Temperature 1.2 BVCES & V(GE)TH - Normalized Fig. 6. Admittance 100 1.1 1 0.9 0.8 0.7 -50 -25 V GE(TH) BV CES 80 IC - Amperes 60 40 20 0 TJ= 125C 25C -40C 0 25 50 75 100 125 150 4 5 6 7 8 9 TJ - Degrees Centigrade VGE - Volts (c) 2003 IXYS All rights reserved IXGH39N60B IXGT39N60B IXGH39N60BD1 IXGT39N60BD1 Fig. 7. Transconductance 50 40 GFS - Siemens 30 20 10 0 0 20 40 60 80 IC - Amperes 100 120 TJ = -40C 25C 125C Fig. 8. Dependence of EOFF on IC 16 14 EOFF - millijoules 12 10 8 6 4 2 10 30 50 IC - Amperes 70 90 RG = 5 Ohms TJ = 125C V GE = 15V V CE = 480V RG = 56 Ohms Fig. 9. Dependence of EOFF on RG 16 14 EOFF - milliJoules 12 EOFF - millijoules 10 8 6 4 2 0 0 10 20 30 RG - Ohm s 40 50 60 IC = 19.5A TJ = 125C V GE = 15V V CE = 480V IC = 39A IC = 78A 12 9 6 3 0 18 15 Fig. 10. Dependence of EOFF on Temperature Solid lines - RG = 5 Ohms Dashed lines - RG = 56 Ohms V GE = 15V V CE = 480V IC = 78A IC = 39A IC = 19.5A 0 25 50 75 100 125 150 TJ - Degrees Centigrades Fig. 11. Gate Charge 15 12 VCE - Volts 9 6 3 0 0 20 40 60 80 QG - nanocoulombs 100 120 V CE=300V IC=20A Fig. 12. Transient Thermal Response 1 R(TH)JC (C/W) IG=10mA 0.1 0.01 1 10 100 Pulse Width - milliseconds 1000 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1 IXGH39N60B IXGT39N60B IXGH39N60BD1 IXGT39N60BD1 60 A 50 IF 40 1000 T = 100C VJ nC VR = 300V 800 Qr 30 A 25 IRM 20 15 400 20 10 TVJ= 100C VR = 300V IF= 60A IF= 30A IF= 15A IF= 60A IF= 30A IF= 15A TVJ=150C 30 600 TVJ=100C TVJ=25C 10 0 0 1 2 VF 3V 200 5 0 A/s 1000 -diF/dt 0 200 400 600 A/s 1000 800 -diF/dt 0 100 Fig. 12 Forward current IF versus VF Fig. 13 Reverse recovery charge Qr versus -diF/dt 90 ns Fig. 14 Peak reverse current IRM versus -diF/dt 20 TVJ= 100C IF = 30A V VFR 15 1.00 2.0 TVJ= 100C VR = 300V VFR s tfr 0.75 1.5 Kf 1.0 trr 80 tfr IRM 70 IF= 60A IF= 30A IF= 15A 10 0.50 0.5 Qr 5 0.25 0.0 0 40 80 120 C 160 TVJ 60 0 200 400 600 -diF/dt 800 A/s 1000 0 0 200 400 0.00 600 A/s 1000 800 diF/dt Fig. 15 Dynamic parameters Qr, IRM versus TVJ 1 K/W Fig. 16 Recovery time trr versus -diF/dt Fig. 17 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: i Rthi (K/W) 0.502 0.193 0.205 ti (s) 0.0052 0.0003 0.0162 0.1 ZthJC 1 2 3 0.01 0.001 0.00001 DSEP 29-06 0.0001 0.001 0.01 0.1 t s 1 Fig. 18 Transient thermal resistance junction to case (c) 2003 IXYS All rights reserved |
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